onsemi · FETs & Power MOSFETs · MPN 2SJ651-TH
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 92mΩ@4V |
| Input Capacitance(Ciss) | 2.2nF |
| Type | P-Channel |
60V 20A 2.6V 25W 92mΩ@4V P-Channel Single FETs, MOSFETs RoHS