onsemi · FETs & Power MOSFETs · MPN 2SJ632-TD-E
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| Gate Charge(Qg) | 9nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 39pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 360mΩ@10V |
| Input Capacitance(Ciss) | 365pF |
60V 2A 2.6V 3.5W 360mΩ@10V Single FETs, MOSFETs RoHS