onsemi 2SD1802T-TL-E

onsemi · Transistors (BJTs) · MPN 2SD1802T-TL-E

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))350mV

Technical details

50V 100 1 NPN NPN 3A TO-252-3 Single Bipolar Transistors RoHS

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