onsemi 2SD1620-TD-E

onsemi · Transistors (BJTs) · MPN 2SD1620-TD-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO10V
DC Current Gain140
Pd - Power Dissipation500mW
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))300mV
Operating Temperature-

Technical details

10V 140 NPN 3A SOT-89-3 Single Bipolar Transistors RoHS

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