onsemi 2SC5707-E

onsemi · Transistors (BJTs) · MPN 2SC5707-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)330MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)8A
Operating Temperature-
Vce Saturation(VCE(sat))240mV

Technical details

50V 200 1 NPN NPN 8A TO-251(IPAK) Single Bipolar Transistors RoHS

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