onsemi 2SC5501A-4-TR-E

onsemi · Transistors (BJTs) · MPN 2SC5501A-4-TR-E

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO10V
Pd - Power Dissipation500mW
DC Current Gain90
Current - Collector(Ic)70mA
Transition frequency(fT)7GHz
typeNPN
Number1 NPN

Technical details

10V 500mW 90 70mA NPN MCP-4 Bipolar RF Transistors RoHS

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