onsemi 2SC3596E

onsemi · Transistors (BJTs) · MPN 2SC3596E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)700MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO4V
Pd - Power Dissipation8W
Number1 NPN
typeNPN
Current - Collector(Ic)300mA
Vce Saturation(VCE(sat))800mV

Technical details

60V 1 NPN NPN 300mA Single Bipolar Transistors RoHS

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