onsemi 2SC3143-4-TB-E

onsemi · Transistors (BJTs) · MPN 2SC3143-4-TB-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)80mA
Vce Saturation(VCE(sat))700mV

Technical details

160V 1 NPN NPN 80mA Single Bipolar Transistors RoHS

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