onsemi · Transistors (BJTs) · MPN 2SB1216T-TL-H
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| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 180MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 20W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 4A |
| Vce Saturation(VCE(sat)) | 400mV |
| Operating Temperature | - |
100V 200 1 PNP PNP 4A TO-252 Single Bipolar Transistors RoHS