onsemi 2SB1201S-TL-E

onsemi · Transistors (BJTs) · MPN 2SB1201S-TL-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation800mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor PNP 50V 2A 150MHz 0.8W Surface Mount TO-252

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