onsemi 2SB1167S

onsemi · Transistors (BJTs) · MPN 2SB1167S

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation20W
typePNP
Number1 PNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV

Technical details

100V PNP 1 PNP 3A Single Bipolar Transistors RoHS

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