onsemi 2SB1126-TD-E

onsemi · Transistors (BJTs) · MPN 2SB1126-TD-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation1.5W
typePNP
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))1.5V

Technical details

50V PNP 1.5A Single Bipolar Transistors RoHS

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