onsemi · Transistors (BJTs) · MPN 2SB1126-TD-E
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 120MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| Pd - Power Dissipation | 1.5W |
| type | PNP |
| Current - Collector(Ic) | 1.5A |
| Vce Saturation(VCE(sat)) | 1.5V |
50V PNP 1.5A Single Bipolar Transistors RoHS