onsemi · Transistors (BJTs) · MPN 2SB1123S-TD-E
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 500mW |
| type | PNP |
| Current - Collector(Ic) | 2A |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 400mV |
50V 100 PNP 2A TO-243 Single Bipolar Transistors RoHS