onsemi 2SB1123S-TD-E

onsemi · Transistors (BJTs) · MPN 2SB1123S-TD-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation500mW
typePNP
Current - Collector(Ic)2A
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

50V 100 PNP 2A TO-243 Single Bipolar Transistors RoHS

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