onsemi 2N7002WT1G

onsemi · FETs & Power MOSFETs · MPN 2N7002WT1G

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Specifications

Gate Charge(Qg)700pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)4.2pF
Current - Continuous Drain(Id)340mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation330mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)24.5pF
TypeN-Channel

Technical details

N-Channel 60V 340mA 330mW Surface Mount SC-70(SOT-323)

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