onsemi 2N7002V

onsemi · FETs & Power MOSFETs · MPN 2N7002V

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Specifications

Current - Continuous Drain(Id)280mA
Pd - Power Dissipation250mW
RDS(on)2Ω@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)7pF
Number2 N-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF

Technical details

280mA 250mW 2Ω@10V 2.5V 2 N-Channel SOT-563F FET, MOSFET Arrays RoHS

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