onsemi 2N7002KT1G

onsemi · FETs & Power MOSFETs · MPN 2N7002KT1G

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Specifications

Gate Charge(Qg)700pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)380mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation420mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2.5Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)45pF
TypeN-Channel

Technical details

N-Channel 60V 380mA 420mW Surface Mount SOT-23

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