onsemi 2N7002ET7G

onsemi · FETs & Power MOSFETs · MPN 2N7002ET7G

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)810pC@5V
Current - Continuous Drain(Id)260mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation300mW
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)40pF

Technical details

N-Channel 60V 260mA 300mW Surface Mount SOT-23

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