onsemi · FETs & Power MOSFETs · MPN 2N7002ET1G
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| Gate Charge(Qg) | 810pC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 310mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| RDS(on) | 3Ω@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 40pF |
N-Channel 60V 310mA 300mW Surface Mount SOT-23