onsemi · FETs & Power MOSFETs · MPN 2N7002DW-G
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| Current - Continuous Drain(Id) | 115mA |
|---|---|
| Pd - Power Dissipation | 200mW |
| RDS(on) | 2Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 60V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
| Operating Temperature | -55℃~+150℃ |
115mA 200mW 2Ω@10V 2V 2 N-Channel SOT-363-6 FET, MOSFET Arrays RoHS