onsemi 2N7000TA

onsemi · FETs & Power MOSFETs · MPN 2N7000TA

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation400mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

N-Channel 60V 200mA 400mW Through Hole TO-92-2.54mm

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