onsemi · FETs & Power MOSFETs · MPN 2N7000-D26Z
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| Drain to Source Voltage | 60V |
|---|---|
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 50pF |
| Type | N-Channel |
N-Channel 60V 200mA 400mW Through Hole TO-92-3L