onsemi 2N6519RLRA

onsemi · Transistors (BJTs) · MPN 2N6519RLRA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1.5W
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

300V 500mA Single Bipolar Transistors

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