onsemi 2N5885G

onsemi · Transistors (BJTs) · MPN 2N5885G

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Specifications

Current - Collector Cutoff2mA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain20
Pd - Power Dissipation200W
typeNPN
Current - Collector(Ic)25A
Operating Temperature-65℃~+200℃
Vce Saturation(VCE(sat))4V

Technical details

60V 20 NPN 25A TO-204 Single Bipolar Transistors RoHS

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