onsemi · Transistors (BJTs) · MPN 2N5210TA
No reviews yet — be the first to review onsemi 2N5210TA.
| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 30MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 4.5V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 625mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 700mV |
50V 200 1 NPN NPN 100mA TO-92-3 Single Bipolar Transistors RoHS