onsemi 2N5190G

onsemi · Transistors (BJTs) · MPN 2N5190G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain25
Pd - Power Dissipation40W
typeNPN
Current - Collector(Ic)4A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1.4V

Technical details

40V 25 NPN 4A TO-225-3 Single Bipolar Transistors RoHS

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