onsemi 2N5088TA

onsemi · Transistors (BJTs) · MPN 2N5088TA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain350
Pd - Power Dissipation625mW
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

30V 350 NPN 100mA TO-92-3 Single Bipolar Transistors RoHS

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