onsemi 2N3906TF

onsemi · Transistors (BJTs) · MPN 2N3906TF

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation625mW
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3L

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