onsemi · Transistors (BJTs) · MPN 2N3859A
No reviews yet — be the first to review onsemi 2N3859A.
| Current - Collector Cutoff | 500nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 625mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | - |
60V 100 1 NPN NPN 500mA TO-92-3 Single Bipolar Transistors RoHS