onsemi 1HP04CH-TL-W

onsemi · FETs & Power MOSFETs · MPN 1HP04CH-TL-W

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Specifications

Gate Charge(Qg)900pC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)2.8pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation600mW
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)21Ω@4V
Number1 P-Channel
Input Capacitance(Ciss)14pF
TypeP-Channel

Technical details

P-Channel 100V 170mA 0.6W Surface Mount TO-236AB

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