onsemi · FETs & Power MOSFETs · MPN 1HN04CH-TL-W
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 900pC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 600mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 8Ω |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15pF |
100V 2.6V 600mW 8Ω 1 N-channel CPH-3 Single FETs, MOSFETs RoHS