NXP PMZB600UNEL315

NXP · Transistors (BJTs) · MPN PMZB600UNEL315

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Specifications

Collector - Emitter Voltage VCEO	20V
Pd - Power Dissipation	715mW
Current - Collector(Ic)	600mA
Operating Temperature	-55℃~+150℃

Technical details

20V 600mA Single Bipolar Transistors RoHS

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