NXP PMBT4403YS115

NXP · Transistors (BJTs) · MPN PMBT4403YS115

No reviews yet — be the first to review NXP PMBT4403YS115.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation550mW
typePNP
Number2 PNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))750mV
Operating Temperature-55℃~+150℃

Technical details

40V PNP 2 PNP 600mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)