NXP PMBT3906/DG215

NXP · Transistors (BJTs) · MPN PMBT3906/DG215

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation250mW
typePNP
Number1 PNP
Current - Collector(Ic)200mA
Operating Temperature-65℃~+150℃

Technical details

40V PNP 1 PNP 200mA TO-236AB-3 Single Bipolar Transistors RoHS

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