NXP PHPT61010PY115

NXP · Transistors (BJTs) · MPN PHPT61010PY115

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation25W
typePNP
Number1 PNP
Current - Collector(Ic)10A
Operating Temperature-55℃~+175℃

Technical details

100V PNP 1 PNP 10A Single Bipolar Transistors RoHS

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