NXP PHPT61006NY115

NXP · Transistors (BJTs) · MPN PHPT61006NY115

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation25W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))340mV
Operating Temperature-55℃~+175℃

Technical details

100V 1 NPN NPN 6A Single Bipolar Transistors RoHS

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