NXP PDTD113ZU115

NXP · Transistors (BJTs) · MPN PDTD113ZU115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)225MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation425mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))100mV

Technical details

50V NPN 500mA Single Bipolar Transistors RoHS

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