NXP PDTC124XE/DG/B2115

NXP · Transistors (BJTs) · MPN PDTC124XE/DG/B2115

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))150mV
Operating Temperature-65℃~+150℃

Technical details

50V 1 NPN NPN 100mA Single Bipolar Transistors RoHS

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