NXP PDTB143XU115

NXP · Transistors (BJTs) · MPN PDTB143XU115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation425mW
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))100mV
Operating Temperature-55℃~+175℃

Technical details

50V PNP 500mA Single Bipolar Transistors RoHS

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