NXP · Transistors (BJTs) · MPN PDTA114ET/DG/B2215
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 180MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| Pd - Power Dissipation | 250mW |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 150mV |
| Operating Temperature | -65℃~+150℃ |
50V PNP 1 PNP 100mA TO-236AB-3 Single Bipolar Transistors RoHS