NXP · Transistors (BJTs) · MPN PBSS9110D/S911115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 700mW |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 1A |
| Vce Saturation(VCE(sat)) | 320mV |
| Operating Temperature | -65℃~+150℃ |
100V PNP 1 PNP 1A Single Bipolar Transistors RoHS