NXP PBSS5260PAPS115

NXP · Transistors (BJTs) · MPN PBSS5260PAPS115

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation700mW
Number2 PNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

60V 2 PNP 2A Single Bipolar Transistors RoHS

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