NXP MX0912B351Y,114

NXP · Transistors (BJTs) · MPN MX0912B351Y,114

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff140mA
Collector - Emitter Voltage VCEO20V
Pd - Power Dissipation960W
Current - Collector(Ic)21A
typeNPN
Number1 NPN

Technical details

20V 960W 21A NPN Bipolar RF Transistors RoHS

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