NXP MW6S010NR1

NXP · FETs & Power MOSFETs · MPN MW6S010NR1

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Specifications

Drain to Source Voltage68V
Current - Continuous Drain(Id)-
TypeN-Channel
Gate Threshold Voltage (Vgs(th))3V
Operating Temperature-65℃~+150℃
Pd - Power Dissipation10W
Reverse Transfer Capacitance (Crss@Vds)0.32pF
Input Capacitance(Ciss)23pF
Output Capacitance(Coss)10pF

Technical details

N-Channel 68V 10W Surface Mount TO-270-2

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