NXP MRFE6S9200HR3

NXP · FETs & Power MOSFETs · MPN MRFE6S9200HR3

No reviews yet — be the first to review NXP MRFE6S9200HR3.

Specifications

Drain to Source Voltage66V
ConfigurationCommon source
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))2.7V
Operating Temperature-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)2.41pF
Input Capacitance(Ciss)557.27pF
Gate Charge(Qg)-
Output Capacitance(Coss)74.61pF

Technical details

66V 2.7V NI-880 RF FETs, MOSFETs RoHS

Related FETs & Power MOSFETs