NXP MRFE6S9160HSR3

NXP · FETs & Power MOSFETs · MPN MRFE6S9160HSR3

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Specifications

Drain to Source Voltage66V
Configuration-
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))3V
Operating Temperature-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)2.2pF
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Output Capacitance(Coss)80.2pF

Technical details

66V 3V RF FETs, MOSFETs RoHS

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