NXP MRF9030MBR1

NXP · FETs & Power MOSFETs · MPN MRF9030MBR1

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Specifications

Drain to Source Voltage65V
ConfigurationCommon source
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))4V
Operating Temperature-
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
Number1 N-channel
Input Capacitance(Ciss)49pF
Gate Charge(Qg)-

Technical details

65V 4V 139W 1 N-channel TO-272-2 RF FETs, MOSFETs

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