NXP MRF8S21100HSR3

NXP · FETs & Power MOSFETs · MPN MRF8S21100HSR3

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Specifications

Drain to Source Voltage65V
TypeN-Channel
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation108W

Technical details

65V 2.7V 108W RF FETs, MOSFETs RoHS

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