NXP MRF8S18260HSR6

NXP · FETs & Power MOSFETs · MPN MRF8S18260HSR6

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Specifications

Drain to Source Voltage65V
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))2.6V
Operating Temperature-
Pd - Power Dissipation420W
Reverse Transfer Capacitance (Crss@Vds)-
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Output Capacitance(Coss)-

Technical details

65V 2.6V 420W RF FETs, MOSFETs RoHS

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