NXP · FETs & Power MOSFETs · MPN MRF8P20161HSR3
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| Drain to Source Voltage | 65V |
|---|---|
| Current - Continuous Drain(Id) | - |
| Type | N-Channel |
| RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Operating Temperature | - |
| Pd - Power Dissipation | 206W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | - |
65V 2.7V 206W RF FETs, MOSFETs RoHS