NXP MRF7S27130HSR3

NXP · FETs & Power MOSFETs · MPN MRF7S27130HSR3

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Specifications

Drain to Source Voltage65V
Current - Continuous Drain(Id)-
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))2.7V
Operating Temperature-
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)10.4pF
Input Capacitance(Ciss)326pF
Gate Charge(Qg)-
Output Capacitance(Coss)711pF

Technical details

65V 2.7V 150W RF FETs, MOSFETs RoHS

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